Power Management ICs

Battery Protection IC for 2-Serial to 4-Serial-cell Pack (Secondary Protection) S-8264A/B/C Series

DatasheetJul. 29, 2022

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The S-8264A/B/C Series is used for secondary protection of lithium-ion rechargeable batteries, and incorporates a high-accuracy voltage detection circuit and a delay circuit. Short-circuits between cells accommodate series connection of two to four cells.

Features

High-accuracy voltage detection circuit for each cell
Overcharge detection voltage n (n = 1 to 4) 4.20 V to 4.80 V (in 50 mV steps)
Accuracy ±25 mV (+25°C), Accuracy ±30 mV (-5°C to +55°C)
Overcharge hysteresis voltage n (n = 1 to 4) -0.52 ±0.21 V, -0.39 ±0.16 V, -0.26 ±0.11 V, -0.13 ±0.06 V, None
Delay times for overcharge detection can be set by an internal circuit only (external capacitors are unnecessary)
Output control function via CTL pin (CTL pin is pulled down internally) (S-8264A Series)
Output control function via CTL pin (CTL pin is pulled up internally) (S-8264C Series)
Output latch function after overcharge detection (S-8264B Series)
Output form and logic
CMOS output active “H”
High withstand voltage devices
Absolute maximum rating: 26 V
Wide operating voltage range
3.6 V to 24 V
Wide operating temperature range
-40°C to +85°C
Low current consumption
At 3.5 V for each cell: 5.0 µA max. (+25°C)
At 2.3 V for each cell: 4.0 µA max. (+25°C)
Lead-free, Sn 100%, halogen-free*1

*1. Refer to “Product Name Structure” for details.

Applications

  • Lithium-ion rechargeable battery packs (for secondary protection)

Standard Circuit

Standard Circuit

Parts List

Product namePackageOvercharge Detection
Voltage
[VCU]
(V)		Overcharge Hysteresis
Voltage
[VHC]
(V)		Overcharge Detection
Delay Time
[tCU]
(s)		Output Form
Product name
S-8264AAA-I8T1USNT-8A4.450±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264AAB-I8T1USNT-8A4.350±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264AAC-I8T1USNT-8A4.500±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264AAD-I8T1USNT-8A4.350±0.025-0.390±0.1602.0±0.4CMOS output active “H”
S-8264AAE-I8T1USNT-8A4.300±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264AAF-I8T1USNT-8A4.450±0.025-0.390±0.1602.0±0.4CMOS output active “H”
S-8264AAG-I8T1USNT-8A4.300±0.025-0.390±0.1602.0±0.4CMOS output active “H”
S-8264AAH-I8T1USNT-8A4.400±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264AAI-I8T1USNT-8A4.400±0.025-0.390±0.1602.0±0.4CMOS output active “H”
S-8264AAJ-I8T1USNT-8A4.450±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264AAK-I8T1USNT-8A4.350±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264AAO-I8T1USNT-8A4.400±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264AAS-I8T1USNT-8A4.500±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264AAT-I8T1USNT-8A4.550±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264AAV-I8T1USNT-8A4.600±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264AAW-I8T1USNT-8A4.220±0.025-0.390±0.1602.0±0.4CMOS output active “H”
S-8264AAX-I8T1USNT-8A4.650±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264AAA-T8T1x8-Pin TSSOP4.450±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264AAB-T8T1x8-Pin TSSOP4.350±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264AAK-T8T1U8-Pin TSSOP4.350±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264BAA-I8T1USNT-8A4.450±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264BAB-I8T1USNT-8A4.350±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264BAC-I8T1USNT-8A4.550±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264BAD-I8T1USNT-8A4.650±0.025-0.390±0.1605.65±1.15CMOS output active “H”
S-8264BAB-T8T1x8-Pin TSSOP4.350±0.025-0.390±0.1604.0±0.8CMOS output active “H”
S-8264CAA-I8T1USNT-8A4.450±0.025-0.390±0.1602.0±0.4CMOS output active “H”
S-8264CAB-I8T1USNT-8A4.220±0.025-0.260±0.1102.0±0.4CMOS output active “H”

Please confirm the product name and specifications with the data sheet again.

Last modified: Aug. 05, 2022

  • These descriptions may be different from the actual product name and parameter.
    Please confirm the product name and specifications with the data sheet again.
  • The information herein is subject to change without notice.