Battery Protection IC for 1-Cell Pack S-8211E Series

The S-8211E Series has the high-accuracy voltage detection circuit and the delay circuit. This IC is suitable for monitoring overcharge and overdischarge of 1-cell lithium ion / lithium polymer secondary battery pack.

Features

High-accuracy voltage detection circuit: Overcharge detection voltage 3.6 V to 4.5 V (5 mV step) Accuracy ±25 mV (+25°C) / Accuracy ±30 mV (-5°C to +55°C; Overcharge release voltage 3.5 V to 4.4 V^*1 Accuracy ±50 mV; Overdischarge detection voltage 2.0 V to 3.0 V (10 mV step) Accuracy ±50 mV; Overdischarge release voltage 2.0 V to 3.4 V^*2 Accuracy ±100 mV
Detection delay times are generated by an internal circuit (external capacitors are unnecessary) Accuracy ±20%
Wide operating temperature range: -40°C to +85°C
Low current consumption: Operation mode 3.0 µA typ., 5.5 µA max. (+25°C); Overdischarge mode 2.0 µA typ., 3.5 µA max. (+25°C)
Lead-free, Sn 100%, halogen-free

*1. Overcharge release voltage = Overcharge detection voltage – Overcharge hysteresis voltage (Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)

*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)

Applications

Lithium-ion rechargeable battery packs
Lithium-polymer rechargeable battery packs

Parts List

Product name	Package	Overcharge Detection Voltage [VCU] (V)	Overcharge Release Voltage [VCL] (V)	Overdischarge Detection Voltage [VDL] (V)	Overdischarge Release Voltage [VDU] (V)	Overcharge Detection Delay Time [tCU] (s)	Overdischarge Detection Delay Time [tDL] (ms)	CO Pin Output Form
Product name
S-8211EAC-M5T1U	SOT-23-5	3.600	3.600	2.00	2.00	1.2	150	CMOS output active “L”
S-8211EAF-M5T1U	SOT-23-5	3.650	3.550	2.00	2.30	0.573	300	CMOS output active “L”
S-8211EAG-M5T1U	SOT-23-5	3.800	3.600	2.00	2.30	0.573	300	CMOS output active “L”
S-8211EAJ-M5T1U	SOT-23-5	4.180	4.180	2.50	3.00	1.2	150	CMOS output active “H”
S-8211EAK-M5T1U	SOT-23-5	3.600	3.600	2.00	2.30	1.2	150	CMOS output active “H”
S-8211EAA-I6T1U	SNT-6A	4.220	4.220	2.00	2.00	0.573	300	CMOS output active “L”
S-8211EAB-I6T1U	SNT-6A	4.270	4.270	2.00	2.00	0.573	300	CMOS output active “L”
S-8211EAD-I6T1U	SNT-6A	4.220	4.220	2.50	2.50	0.573	300	CMOS output active “L”
S-8211EAE-I6T1U	SNT-6A	4.220	4.220	2.30	2.30	0.573	300	CMOS output active “L”
S-8211EAH-I6T1U	SNT-6A	4.000	3.800	3.00	3.20	1.2	150	CMOS output active “L”
S-8211EAI-I6T1U	SNT-6A	3.800	3.700	2.30	2.40	1.2	150	CMOS output active “L”
S-8211EAP-I6T1U	SNT-6A	4.280	4.080	2.50	2.50	1.2	150	CMOS output active “L”

Product name

Package

Overcharge
Detection
Voltage
[VCU]
(V)

Overcharge
Release
Voltage
[VCL]
(V)

Overdischarge
Detection
Voltage
[VDL]
(V)

Overdischarge
Release
Voltage
[VDU]
(V)

Overcharge
Detection
Delay Time
[tCU]
(s)

Overdischarge
Detection
Delay Time
[tDL]
(ms)

CO Pin
Output
Form

Product name

S-8211EAC-M5T1U

SOT-23-5

3.600

2.00

1.2

150

CMOS output active “L”

S-8211EAF-M5T1U

SOT-23-5

3.650

3.550

2.00

2.30

0.573

300

CMOS output active “L”

S-8211EAG-M5T1U

SOT-23-5

3.800

3.600

2.00

2.30

0.573

300

CMOS output active “L”

S-8211EAJ-M5T1U

SOT-23-5

4.180

2.50

3.00

1.2

150

CMOS output active “H”

S-8211EAK-M5T1U

SOT-23-5

3.600

2.00

2.30

1.2

150

CMOS output active “H”

S-8211EAA-I6T1U

SNT-6A

4.220

2.00

0.573

300

CMOS output active “L”

S-8211EAB-I6T1U

SNT-6A

4.270

2.00

0.573

300

CMOS output active “L”

S-8211EAD-I6T1U

SNT-6A

4.220

2.50

0.573

300

CMOS output active “L”

S-8211EAE-I6T1U

SNT-6A

4.220

2.30

0.573

300

CMOS output active “L”

S-8211EAH-I6T1U

SNT-6A

4.000

3.800

3.00

3.20

1.2

150

CMOS output active “L”

S-8211EAI-I6T1U

SNT-6A

3.800

3.700

2.30

2.40

1.2

150

CMOS output active “L”

S-8211EAP-I6T1U

SNT-6A

4.280

4.080

2.50

1.2

150

CMOS output active “L”