Power Management ICs

Battery Protection IC for 1-Cell Pack S-8211E Series

The S-8211E Series has the high-accuracy voltage detection circuit and the delay circuit. This IC is suitable for monitoring overcharge and overdischarge of 1-cell lithium ion / lithium polymer secondary battery pack.

Features

High-accuracy voltage detection circuit
Overcharge detection voltage 3.6 V to 4.5 V (5 mV step) Accuracy ±25 mV (+25°C) / Accuracy ±30 mV (-5°C to +55°C
Overcharge release voltage 3.5 V to 4.4 V*1 Accuracy ±50 mV
Overdischarge detection voltage 2.0 V to 3.0 V (10 mV step) Accuracy ±50 mV
Overdischarge release voltage 2.0 V to 3.4 V*2 Accuracy ±100 mV
Detection delay times are generated by an internal circuit (external capacitors are unnecessary) Accuracy ±20%
Wide operating temperature range
-40°C to +85°C
Low current consumption
Operation mode 3.0 µA typ., 5.5 µA max. (+25°C)
Overdischarge mode 2.0 µA typ., 3.5 µA max. (+25°C)
Lead-free, Sn 100%, halogen-free

*1. Overcharge release voltage = Overcharge detection voltage – Overcharge hysteresis voltage (Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)

*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)

Applications

  • Lithium-ion rechargeable battery packs
  • Lithium-polymer rechargeable battery packs

Parts List

Product namePackageOvercharge
Detection
Voltage
[VCU]
(V)
Overcharge
Release
Voltage
[VCL]
(V)
Overdischarge
Detection
Voltage
[VDL]
(V)
Overdischarge
Release
Voltage
[VDU]
(V)
Overcharge
Detection
Delay Time
[tCU]
(s)
Overdischarge
Detection
Delay Time
[tDL]
(ms)
CO Pin
Output
Form
Product name
S-8211EAC-M5T1USOT-23-53.6003.6002.002.001.2150CMOS output active “L”
S-8211EAF-M5T1USOT-23-53.6503.5502.002.300.573300CMOS output active “L”
S-8211EAG-M5T1USOT-23-53.8003.6002.002.300.573300CMOS output active “L”
S-8211EAJ-M5T1USOT-23-54.1804.1802.503.001.2150CMOS output active “H”
S-8211EAK-M5T1USOT-23-53.6003.6002.002.301.2150CMOS output active “H”
S-8211EAA-I6T1USNT-6A4.2204.2202.002.000.573300CMOS output active “L”
S-8211EAB-I6T1USNT-6A4.2704.2702.002.000.573300CMOS output active “L”
S-8211EAD-I6T1USNT-6A4.2204.2202.502.500.573300CMOS output active “L”
S-8211EAE-I6T1USNT-6A4.2204.2202.302.300.573300CMOS output active “L”
S-8211EAH-I6T1USNT-6A4.0003.8003.003.201.2150CMOS output active “L”
S-8211EAI-I6T1USNT-6A3.8003.7002.302.401.2150CMOS output active “L”
S-8211EAP-I6T1USNT-6A4.2804.0802.502.501.2150CMOS output active “L”

Please confirm the product name and specifications with the data sheet again.

Last modified: Jun. 05, 2015

  • These descriptions may be different from the actual product name and parameter.
    Please confirm the product name and specifications with the data sheet again.
  • The information herein is subject to change without notice.