The S-8211E Series has the high-accuracy voltage detection circuit and the delay circuit. This IC is suitable for monitoring overcharge and overdischarge of 1-cell lithium ion / lithium polymer secondary battery pack.
Features
High-accuracy voltage detection circuit
Overcharge detection voltage 3.6 V to 4.5 V (5 mV step) Accuracy ±25 mV (+25°C) / Accuracy ±30 mV (-5°C to +55°C
Overcharge release voltage 3.5 V to 4.4 V*1 Accuracy ±50 mV
Overdischarge detection voltage 2.0 V to 3.0 V (10 mV step) Accuracy ±50 mV
Overdischarge release voltage 2.0 V to 3.4 V*2 Accuracy ±100 mV
Detection delay times are generated by an internal circuit (external capacitors are unnecessary) Accuracy ±20%
*1. Overcharge release voltage = Overcharge detection voltage – Overcharge hysteresis voltage (Overcharge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.4 V in 50 mV step.)
*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (Overdischarge hysteresis voltage can be selected as 0 V or from a range of 0.1 V to 0.7 V in 100 mV step.)
Applications
Lithium-ion rechargeable battery packs
Lithium-polymer rechargeable battery packs
Parts List
Product name
Package
Overcharge
Detection
Voltage
[VCU]
(V)
Overcharge
Release
Voltage
[VCL]
(V)
Overdischarge
Detection
Voltage
[VDL]
(V)
Overdischarge
Release
Voltage
[VDU]
(V)
Overcharge
Detection
Delay Time
[tCU]
(s)
Overdischarge
Detection
Delay Time
[tDL]
(ms)
CO Pin
Output
Form
Product name
S-8211EAC-M5T1U
SOT-23-5
3.600
3.600
2.00
2.00
1.2
150
CMOS output active “L”
S-8211EAF-M5T1U
SOT-23-5
3.650
3.550
2.00
2.30
0.573
300
CMOS output active “L”
S-8211EAG-M5T1U
SOT-23-5
3.800
3.600
2.00
2.30
0.573
300
CMOS output active “L”
S-8211EAJ-M5T1U
SOT-23-5
4.180
4.180
2.50
3.00
1.2
150
CMOS output active “H”
S-8211EAK-M5T1U
SOT-23-5
3.600
3.600
2.00
2.30
1.2
150
CMOS output active “H”
S-8211EAA-I6T1U
SNT-6A
4.220
4.220
2.00
2.00
0.573
300
CMOS output active “L”
S-8211EAB-I6T1U
SNT-6A
4.270
4.270
2.00
2.00
0.573
300
CMOS output active “L”
S-8211EAD-I6T1U
SNT-6A
4.220
4.220
2.50
2.50
0.573
300
CMOS output active “L”
S-8211EAE-I6T1U
SNT-6A
4.220
4.220
2.30
2.30
0.573
300
CMOS output active “L”
S-8211EAH-I6T1U
SNT-6A
4.000
3.800
3.00
3.20
1.2
150
CMOS output active “L”
S-8211EAI-I6T1U
SNT-6A
3.800
3.700
2.30
2.40
1.2
150
CMOS output active “L”
S-8211EAP-I6T1U
SNT-6A
4.280
4.080
2.50
2.50
1.2
150
CMOS output active “L”
Please confirm the product name and specifications with the data sheet again.
Last modified: Jun. 05, 2015
These descriptions may be different from the actual product name and parameter. Please confirm the product name and specifications with the data sheet again.
The information herein is subject to change without notice.
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